Compositional Analysis of Ge-B-P Doped Silica Soot and Film by Flame Hydrolysis Deposition

초록

Compositional Analysis of Ge-B-P Doped Silica Soot and Film by Flame Hydrolysis Deposition Dong-wook Shin, Ki-hyun Cho, Sun-hwa Lee,Tae-won Lee, Division of Material Science & Engineering, Hanyang University 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea *Corresponding author: dwshin@hanyang.ac.kr Many structural and compositional studies on silica have been conducted by FTIR method, which is well known as an excellent analysis for structural and compositional variations of hydroxyl in silica and physically adsorbed H2O 1). In addition, FTIR is a relatively simple and non-destructive method for analyzing composition since it is easy to prepare samples in the form of power, bulk, and thin film. To apply FTIR method for quantitative analysis of composition, it is important to identify every peak of dopants and the quantitative relationships between the absolute concentration of chemical species and the area or height of relevant peaks. In this research, there are two objectives. One is to identify the structural peaks of silica and dopants such as B, P, and Ge in silica soot deposited by FHD and measure quantitatively the variation of these peaks as a function of flow rate of source gases. The other is obtaining extinction coefficient, which shows the relationship between the peak height of FTIR and the absolute chemical concentration. Among the doped element mentioned above, B is the most abundant in the amorphous silica film. Therefore, it is the first step to analyze this dopant. In this report, the quantitative relationship between FTIR peak height and absolute chemical concentration of B will be discussed and the extinction coefficient of the element will be reported. In this research, the extinction coefficient of B-O band could be obtained by determining the absorbance of B-O band from FTIR absorbance spectrum and the concentration of B from ICP-AES analysis. Furthermore, the structural change of soot deposited by FHD along with processing factors (the various flow rate of the dopant) of FHD process could be determined. References [1] K. Davis, Ph.D, Thesis, Rensselaer Polytechnic Inst., (1993).