Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

  • Lee, Juwon
  • Nagarajan, Ganapathi Subramaniam
  • Shon, Yoon
  • Kwon, Younghae
  • Kang, Tae Won
  • 외 5명
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초록

Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 x 10(-4) Omega cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 x 10(-4) emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.

키워드

THIN-FILMSZNOFERROMAGNETISMTRANSITIONDEPOSITIONBI
제목
Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor
저자
Lee, JuwonNagarajan, Ganapathi SubramaniamShon, YoonKwon, YounghaeKang, Tae WonKim, Deuk YongKim, HyungsangIm, HyunsikPark, Chang-SooKim, Eun Kyu
DOI
10.1063/1.4994044
발행일
2017-08
유형
Article
저널명
AIP Advances
7
8
페이지
1 ~ 8

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