Exceptional Immunity of Drain-Induced Barrier Lowering Effect in a-IGZTO Transistors via Favorable Coupling Effects of Metal-H Bonding

초록

This study shows the beneficial coupling effects of Sn-induced metal-H (M-H) bonding on the drain-induced barrier lowering (DIBL) of amorphous In-Ga-Zn-Sn-O (a-IGZTO) thin-film transistors (TFTs) with short channel length. The a-IGZTO TFTs had a small DIBL factor of 52 mV/V as well as outstanding performance with a high field-effect mobility of 76.9 cm2/Vs, a steep subthreshold swing of 128 mV/decade, and a threshold voltage of 0.05 V. In addition, highly stable behavior against positive gate bias temperature and negative bias illumination temperature stress was observed for a-IGZTO TFTs. This could be attributed to favorable coupling effects of Sn-induced M-H bonding and the formation of a synergistic percolation pathway by In3+ and Sn4+.

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