Enhancement of electrical characteristics and reliability of CuGeS2/GeS2-based super-linear-threshold-switching device by insertion of TiN liner

초록

For preventing a sneak current in the 3D cross-point array, the selection device is essentially necessary and an n-MOSFET has been used for the selection device. However, the three-terminal electrodes of n-MOSFET make to achieve a high density of a cross-point array difficult. As a solution, using a selector having two terminal electrodes has been intensively researched. We presented that the CuGeS2/GeS2-based super-linear-threshold-switching (SLTS) selector device with the insertion of optimal TiN liner thickness exhibited outstanding electrical characteristics and reliability. The dependency of electrical characteristics and reliability on various TiN liner thicknesses were investigated. In addition, the principles of reliability and electrical characteristics improvement were understood through the energy dispersive spectroscopy elemental mapping and line profile of Cu. The adequate amount of Cu distributed in GeS2 resistive switching layer is a key factor to achieve excellent electrical characteristics and reliability for an ultra-high-density 3D cross-point array cell.

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