Unraveling Threshold Voltage Instability in Ferroelectric Junctionless FETs using Low-Frequency Noise Measurement with Base Bias

초록

This study proposes a novel low-frequency noise (LFN) measurement method to investigate the origin of threshold voltage (<italic>V</italic>th) instability in junctionless ferroelectric field-effect transistors. It is found that different types of traps (ferroelectric (FE) / dielectric (DE) interface trap, FE bulk trap, and DE bulk trap) are responsible for the <italic>V</italic>th instability depending on the delay time and the number of program/erase cycles.

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