Unraveling Threshold Voltage Instability in Ferroelectric Junctionless FETs using Low-Frequency Noise Measurement with Base Bias

Shin, Wonjun; Koo, Ryun-Han; Kim, Sangwoo; Kwon, Dongseok; Kim, Jae-Joon; Kwon, Daewoong; Lee, Jong-Ho

doi:10.1109/LED.2023.3310573

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Unraveling Threshold Voltage Instability in Ferroelectric Junctionless FETs using Low-Frequency Noise Measurement with Base Bias

Shin, Wonjun;
Koo, Ryun-Han;
Kim, Sangwoo;
Kwon, Dongseok;
Kim, Jae-Joon;
... Kwon, Daewoong;
외 1명

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초록

This study proposes a novel low-frequency noise (LFN) measurement method to investigate the origin of threshold voltage (<italic>V</italic>th) instability in junctionless ferroelectric field-effect transistors. It is found that different types of traps (ferroelectric (FE) / dielectric (DE) interface trap, FE bulk trap, and DE bulk trap) are responsible for the <italic>V</italic>th instability depending on the delay time and the number of program/erase cycles.

키워드

Threshold voltage (V-th) instability; junctionless ferroelectric field-effect transistor (JL FeFET); low-frequency noise (LFN); FEFET

제목: Unraveling Threshold Voltage Instability in Ferroelectric Junctionless FETs using Low-Frequency Noise Measurement with Base Bias

저자: Shin, Wonjun; Koo, Ryun-Han; Kim, Sangwoo; Kwon, Dongseok; Kim, Jae-Joon; Kwon, Daewoong; Lee, Jong-Ho

DOI: 10.1109/LED.2023.3310573

발행일: 2023-10

유형: Article

저널명: IEEE Electron Device Letters

권: 44

호: 10

페이지: 1768 ~ 1771