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Characteristics of HFO2/AL2O3 film for gate dielectric applications deposited by atomic layer deposition method

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Characteristics of HFO2/AL2O3 film for gate dielectric applications deposited by atomic layer deposition method
저자
전형탁
발행일
2003-03-12
학회명
The 4th International Symposium on Inorganic Materials
개최지
Hynyang University. Seoul. Korea

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