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Challenging issues for terra-bit-level perpendicular STT-MRAM
- Park, JG;
- Shim, TH;
- Chae, KS;
- Lee, DY;
- Takemura, Y;
- ... Hong, Jin Pyo;
- 외 4명
Citations
SCOPUS
15초록
The current challenging issues for terra-bit-level perpendicular STT-MRAM cells have been reviewed in the view of four critical parameters such as TMR ratio, Δ, Jex, and α. The TMR ratio of p-MTJ spin-valves are reaching to < 150% at the BEOL of >350°C. A single MgO based p-MTJ spin-valve could not satisfy Δ of > 74, proposing a double MgO based p-MTJ spin-valve. Jex in SyAF layer adequately met > 0.7erg/cm2 at BEOL of > 350°C. A Co2Fe6B2 based p-MTJ spin-valve limits to a of 0.005, necessary to develop a low α material such as full Heusler half-metal. Thus, an essential challenge in the future is to satisfy four critical parameters simultaneously at > 350°C and 300-mm TiN electrode wafers.
키워드
Electron devices; Iron compounds; Magnesia; Magnetic devices; Magnetoresistance; Titanium nitride; Bit level; Half metals; Heusler; Low alpha; Spin valve; STT-MRAM; TiN electrodes; Magnetic recording
- 제목
- Challenging issues for terra-bit-level perpendicular STT-MRAM
- 저자
- Park, JG; Shim, TH; Chae, KS; Lee, DY; Takemura, Y; Lee, SE; Jeon, MS; Baek, JU; Park, SO; Hong, Jin Pyo
- 발행일
- 2015-02
- 유형
- Conference Paper
- 저널명
- Technical Digest - International Electron Devices Meeting
- 권
- 2015-February
- 호
- February
- 페이지
- 19.2.1 ~ 19.2.4
- 언어
- ENG
- ISSN
- P 0163-1918