Charge transfer mechanisms of P3HT: PCBM photovoltaic cells containing a tungsten oxide hole transport layer

  • Lee, Pil Suk
  • Kim, Dae Hun
  • Lee, Se Han
  • Lim, Isuel
  • Han, Sung Hwan
  • 외 1명
Citations

SCOPUS

0

초록

Organic photovoltaic (OPV) cells containing a tungsten oxide (WO 3) layer inserted between the indium-tin-oxide and the poly(3-hexylthiophene) and the derivative [6,6]-phenyl-C 61-butyric acid methyl ester active layer were fabricated. The short circuit current density, the open circuit voltage, the fill factor, and power conversion efficiency of the OPV cells under an AM 1.5G were 7.45 mA/cm 2, 0.63 V, 0.59, and 2.8%, respectively. The charge transfer mechanisms of the OPV cells containing a WO 3 layer are described on the basis of the experimental results and energy band diagrams.

키워드

Active LayerCharge transfer mechanismsEnergy-band diagramFill factorHole transport layersIndium tin oxideMethyl estersOrganic photovoltaicsPoly (3-hexylthiophene)Power conversion efficienciesTungsten oxideCharge transferConversion efficiencyNanotechnologyOpen circuit voltageOxidesPhotovoltaic cellsTinTungsten compoundsPhotovoltaic effects
제목
Charge transfer mechanisms of P3HT: PCBM photovoltaic cells containing a tungsten oxide hole transport layer
저자
Lee, Pil SukKim, Dae HunLee, Se HanLim, IsuelHan, Sung HwanKim, Tae Whan
DOI
10.1109/NMDC.2011.6155375
발행일
2011-10
유형
Conference Paper
저널명
2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
페이지
353 ~ 356