Bi-Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon-Based Resistive Random-Access Memory

초록

The oxygenated amorphous carbon (alpha-COx)-based resistive random-access memory (ReRAM) generates a bi-stable resistance via electroforming or the rupture of the conductive C-C sp(2) covalent bond filaments in the alpha-COx resistive layer, which can be determined by the dependency of the intensity distribution of the oxygen ion (O2-), for the 3D cross-point nonvolatile memory as the new memory hierarchical structure for an artificial neural network. The conductive C-C sp(2) and insulating C-C sp(3) covalent bonds are formed near the top of the resistive layer by drifting and diffusing O2- toward the bottom and top parts of the layer in the set and reset processes, respectively. The reset process has a different bi-stable resistance generation mechanism from binary metal oxide-based ReRAM and conductive bridge random-access memory. The conductive C-C sp(2) covalent bond intensity in the alpha-COx resistive layer affects the forming voltage and the write and erase endurance cycle of the alpha-COx-based ReRAM cells. The result shows that a lower proportion of conductive C-C sp(2) covalent bond leads to longer write and erase endurance cycles.

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