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Electrical and reliability characteristics of HfO2 MOS capacitor with Mo metal gate electrode
- Park, In-Sung;
- Lee, Taeho;
- Ko, Hankyong;
- Ahn, Jinho
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20초록
The electrical and reliability characteristics of a metal-oxide-semiconductor (MOS) device with high-kappa HfO2 dielectric film were investigated with three metal electrodes. Whereas a Pt electrode has a higher work function but a smaller capacitance due to a thick interfacial layer, Ru and Mo electrodes show lower equivalent oxide thickness and smaller work function rolling off due to excellent quality of the interfacial layer. Compared to devices with a Ru electrode, the MOS capacitor with a Mo electrode exhibits higher dielectric breakdown voltage and excellent reliability characteristics.
키워드
metal electrode; HfO2; work function rolling off; reliability; WORK FUNCTION; THERMAL-STABILITY; HIGH-KAPPA; CMOS; SI; DIELECTRICS; TRANSISTORS; TECHNOLOGY; ALLOY
- 제목
- Electrical and reliability characteristics of HfO2 MOS capacitor with Mo metal gate electrode
- 저자
- Park, In-Sung; Lee, Taeho; Ko, Hankyong; Ahn, Jinho
- 발행일
- 2006-12
- 유형
- Article; Proceedings Paper
- 권
- 49
- 페이지
- S760 ~ S763