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Spin-polarized bandgap of graphene induced by alternative chemisorption with MgO (111) substrate
- Cho, Sung Beom;
- Chung, Yong-Chae
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9초록
Using First-principle calculations, the substrate effect of O-terminated (root 3 x root 3) MgO (111) on graphene was investigated for spintronics application. It was found that the graphene could be turned into a spin-polarized semiconductor due to alternative sp3 chemisorption with the substrate. The majority spin channel has an insulating band gap of 2 eV, while the minority spin channel has a semiconducting band gap of 0.3 eV. These results imply that the graphene with a tailored pattern of chemisorption could be highly efficient for introducing a totally spin-polarized current and controlling its on/off switching.
키워드
ROOM-TEMPERATURE; HALF-METALLICITY; SPINTRONICS; INJECTION; MAGNETORESISTANCE; TRANSPORT; MAGNETISM; SURFACES; SILICON
- 제목
- Spin-polarized bandgap of graphene induced by alternative chemisorption with MgO (111) substrate
- 저자
- Cho, Sung Beom; Chung, Yong-Chae
- 발행일
- 2014-10
- 유형
- Article
- 저널명
- Carbon
- 권
- 77
- 페이지
- 208 ~ 214