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High-Performance p-Channel Tellurium Thin-Film Transistor Applications Fabricated at a Low Temperature of 150 °C
- 김태규;
- Choi, Cheol Hee;
- Jeong, Jae Kyeong
Citations
SCOPUS
0초록
Development of high-performance p-channel thin-film transistors (TFTs) can be an essential building block for next-generation display technologies which require a great power efficiency. While an n-channel In GaZnO TFT has been practically demonstrated, the counterparts are still challenging because of their ionic bonding nature. Here we report high-performance p-channel hexagonal tellurium (Te) TFT which exhibits outstanding device performances with a field-effect mobility of 21.2 cm2/Vs, a current modulation ratio of 2.3 × 10s, a subthreshold swing of 0.2 V/dec, and a threshold voltage of -0.3 V. This study shows a strong potential of p-channel Te TFT for next-generation display applications.
키워드
CMOS TFT; Inorganic p-type semiconductor; Tellurium; Thin-film transistor (TFT); CMOS integrated circuits; Field effect transistors; Tellurium; Tellurium compounds; Temperature; Thin film circuits; Thin films; Threshold voltage; Thin film transistors; C. thin film transistor (TFT); CMOS thin-film transistor; Inorganic p-type semiconductor; Inorganics; Lows-temperatures; P channels; P type semiconductor; Performance; Thin-film transistor
- 제목
- High-Performance p-Channel Tellurium Thin-Film Transistor Applications Fabricated at a Low Temperature of 150 °C
- 저자
- 김태규; Choi, Cheol Hee; Jeong, Jae Kyeong
- 발행일
- 2022-06
- 유형
- Conference Paper
- 권
- 53
- 호
- 1
- 페이지
- 225 ~ 227
- 언어
- ENG
- 분량
- 3 페이지
- ISSN
- E 2168-0159
P 0097-966X