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Low temperature of 150 ℃ processed igto thin-film transistors for flexible display application
- Choi, Cheol Hee;
- 김태규;
- Jeong, Jae Kyeong
Citations
SCOPUS
4초록
The high-performance amorphous In-Ga-Sn-O (a-IGTO) thin-film transistors (TFTs) was fabricated with plasma-enhanced atomic layer deposition (PEALD)-derived Al2O3 high-k gate dielectric at a maximum processing temperature of 150 ℃. During the deposition of Al2O3 dielectric on a-IGTO films, the hydrogen (H) and excess oxygen (Oi) defects from the Al2O3 act significant role on TFTs operation. The amounts of H and Oi can be controlled by adjusting oxygen plasma density in radio-frequency (rf) of PEALD. The optimized a-IGTO TFT exhibit high-performance electrical properties with field-effect mobility (µFE) of 58.8 cm2/Vs, subthreshold gate swing (SS) of 0.12 V/decade, threshold voltage (VTH) of 0.5 V.
키워드
Alumina (Al2O3); Excess oxygen; Hydrogen; Indium-gallium-tin oxide (IGTO); Low temperature; Thin-film transistor (TFT); Aluminum oxide; Atomic layer deposition; Field effect transistors; Flexible displays; Gallium compounds; Gate dielectrics; High-k dielectric; Indium compounds; Oxygen; Processing; Temperature; Thin film circuits; Thin film transistors; Thin films; Threshold voltage; Tin oxides; Alumina; Alumina (al2o3); C. thin film transistor (TFT); Excess oxygen; Indium-gallium-tin oxide; Lows-temperatures; Oxide thinfilm transistors (TFTs); Performance; Plasma-enhanced atomic layer deposition; Thin-film transistor; Tin oxide thin film
- 제목
- Low temperature of 150 ℃ processed igto thin-film transistors for flexible display application
- 저자
- Choi, Cheol Hee; 김태규; Jeong, Jae Kyeong
- 발행일
- 2022-06
- 유형
- Conference Paper
- 권
- 53
- 호
- 1
- 페이지
- 1153 ~ 1156