Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant

초록

Atomic layer deposition (ALD) of In2O3 films was investigated using a novel liquid precursor, [3-(dimethylamino)propyl] dimethyl indium (DADI). Typical ALD growth was observed at a substrate temperature of 275 degrees C, with relatively high growth rates of 0.6 angstrom/cycle. The In2O3 layer exhibits low resistivity (9.2 x 10(-5) Omega cm) with relatively high optical transparency (> 80% between 420 and 700 nm). The carrier concentration is approximately one or two orders of magnitude higher than those reported in the literature. The origin of such electrical properties is investigated with respect to the microstructure and chemical properties of the In2O3 film.

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