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초록
The Ti3SiC2 materials were synthesized by hot pressing TiCx and Si powder mixtures. The matrix grains were lamellar, having a small amount of TiCx. The high-temperature stability was investigated by subjecting Ti3SiC2 to high-temperature oxidation up to 1200°C in air. Ti3SiC 2 began to oxidize appreciably above 850°C. The oxidation resulted in the formation of the oxide layer that consisted of TiO2 and SiO2. The scales formed were adherent.
키워드
Chemical stability; Oxidation; Ternary carbide; Ti3SiC2; Chemical stability; Hot pressing; Oxidation; Silicon carbide; Thermodynamic stability; Oxide layers; Powder mixtures; Ternary carbide; Titanium compounds
- 제목
- High temperature stability of bulk Ti3SiC2 materials in air
- 저자
- Lee, Donghun; Han, Jae-Ho; Kim, Young Do; Park, Sang-whang; Lee, Dongbok
- 발행일
- 2007-09
- 유형
- Conference Paper
- 권
- 534-536
- 호
- PART 2
- 페이지
- 1037 ~ 1040