Effects of r-plane Sapphire Substrate Tilt Angles on the Growth Behavior of Nonpolar a-plane GaN

초록

We investigated the effect of a slight tilt of an r-plane sapphire substrate on the morphological properties of a-plane GaN grown by using metal-organic chemical vapor deposition. The tilt angle of the r-plane sapphire was varied from 0 degrees to -0.65 degrees toward the c-axis of sapphire. Slight tilt angles of the r-plane sapphire toward the c-axis of sapphire ranging from 0 degrees to -0.37 degrees were found to be suitable for growing triangular pit-free a-plane GaN with a microscopically smooth surface. Tilt angles larger than -0.37 degrees improved the crystalline quality in the direction of the m- axis of GaN but caused non-uniform growth and pit formation on the surface.

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