Enhanced Curie temperature persisting between 100 and 200 K (similar to 50 K by theory) with Mn (similar to 0.290%) based on InMnP : Zn

  • Shon, Yoon
  • Jeon, H. C.
  • Lee, Sejoon
  • Lee, S. -W.
  • Kim, D. Y.
  • ... Yoon, Chong S.
  • 외 7명
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초록

The samples with the Mn concentrations of 0.290% and 0.062% revealed that both in the calculated diffraction pattern and experimental pattern of transmission electron microscopy (TEM), the FCC lattice was still maintained after the Mn doping. The regularly spaced spots of ordered Mn produce the anomalous Hall effect (AHE) showing the characteristics of diluted magnetic semiconductor, which is caused by hole-mediated ferromagnetism due to the increase of hole concentration in tetrahedrally coordinated semiconductor. Ferrornagnetic semiconductor of T-c between 100 and 200 K demonstrated by TEM and AHE can be formed in diluted magnetic semiconductor based on InMnP:Zn epilayers additionally co-doped with Zn.

키워드

metalorganic chemical vapor depositionmolecular beam epitaxymagnetic materialssemiconducting indium phosphideDILUTED MAGNETIC SEMICONDUCTORNEUTRAL MANGANESE ACCEPTORROOM-TEMPERATUREFERROMAGNETISM
제목
Enhanced Curie temperature persisting between 100 and 200 K (similar to 50 K by theory) with Mn (similar to 0.290%) based on InMnP : Zn
저자
Shon, YoonJeon, H. C.Lee, SejoonLee, S. -W.Kim, D. Y.Kang, T. W.Kim, Eun KyuYoon, Chong S.Kim, C. K.Park, Y. J.Kim, YongminBaik, J. M.Lee, J. L.
DOI
10.1016/j.jcrysgro.2006.10.133
발행일
2006-12
유형
Article
저널명
Journal of Crystal Growth
297
2
페이지
289 ~ 293