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Electrical characterization of non volatile memory device with In2O3 nano-particles embedded in polyimide
- Lee, Dong Uk;
- Kim, Seon Pil;
- Kim, Jae Hoon;
- Kim, Eun Kyu;
- Koo, Hyun Mo;
- 외 2명
Citations
WEB OF SCIENCE
2초록
We fabricated a nano-floating gate memory (NFGM) with In2O3 nano-particles embedded in polyimide insulators. Self-assembled In2O3 nano-particles were created by chemical reaction between polymer precursor and indium film. The particle size and density were about 7 nm and 6 X l0(ll) cm(-2), respectively. Electrical characterization of the NFGM with In2O3 nano-particles was performed, and the memory window was about 1.3 V at the initial status of writing and erasing operations.
키워드
In2O3; nano-floating gate memory; nonvolatile; polyimide insulator; FABRICATION
- 제목
- Electrical characterization of non volatile memory device with In2O3 nano-particles embedded in polyimide
- 저자
- Lee, Dong Uk; Kim, Seon Pil; Kim, Jae Hoon; Kim, Eun Kyu; Koo, Hyun Mo; Cho, Won Ju; Kim, Young Ho
- 발행일
- 2007-12
- 유형
- Article; Proceedings Paper
- 권
- 51
- 페이지
- S318 ~ S321