Reconfigurable Tin-Halide Perovskite Resistive Switching Memory for Reservoir Computing System in Braille Code Translator

초록

Resistive switching memories (RSMs) have emerged as promising candidates for a reservoir computing (RC) system, which excels in processing temporal information. Their ability to function as either volatile or nonvolatile devices makes them ideal for reservoir and readout layers. However, conventional RSMs require separate devices for these functionalities, complicating integrated RC systems. Here, we introduce tin-halide perovskite as a switching medium and present a reconfigurable RSM with Pt/FASnI3/Ag structure that integrates volatile and nonvolatile properties by modulating switching mechanisms. Under a positive bias to the Pt electrode, the device operates in a volatile threshold-switching mode based on space-charge-limited conduction, exhibiting short-term dynamics─key features for reservoir layers. On the other hand, applying positive bias to the Ag electrode activates a nonvolatile bipolar-switching mode, driven by reversible filamentary mechanisms, with long-term potentiation and depression characteristics, suitable for readout layers. Using this reconfigurable RSM, we developed a hardware RC system for Braille code recognition. © 2025 American Chemical Society.

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