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초록
20-nm-gate-length erbium-/platinum-silicided n-/p-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 20-nm-gate-length n-/p-type SB-MOSFETs showed large on/off current ratio (>10(6)) with low leakage current less than 10(-5) mu A/mu m due to the existence of the Schottky barrier between source and channel region. The saturation currents were 550 and -376 mu A/mu m when drain and gate voltages are 2/-2 and 3/-3 V, for the n-/p-type SB-MOSFET, respectively.
키워드
erbium; leakage currents; MOSFET; platinum compounds; Schottky barriers; Dielectric devices; Electric conductivity; Erbium; Field effect transistors; Ion beams; Leakage currents; Platinum; Platinum metals; Schottky barrier diodes; Semiconductor materials; Silicides; Sugar (sucrose); Transistors
- 제목
- 20-nm-gate-length erbium-/platinum-silicided n-/p-type Schottky barrier metal-oxide-semiconductor field-effect transistors
- 저자
- Jang, Moongyu; Choi, Cheljong; Lee, Seongjae
- 발행일
- 2008-11
- 유형
- Article
- 권
- 93
- 호
- 19
- 페이지
- 1 ~ 3