Electronic structure and defect states of transition metal doped rutile TiO2

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초록

The electronic structure and defect states of 6.25% transition metal (TM = Fe and Co) doped rutile titanium dioxide were investigated by ab initio ultrasoft pseudopotential plane wave method based on density functional theory. When a Fe or Co atom was substituted for a Ti site of TiO2 lattice, additional unoccupied 3d-states of TM appeared as defect states in band-gap and occupied 3d-states represented metallic behavior (half-filled states).It was found that two occupied defect states and one half-filled defect state were the 3d-states of TM from the calculation of band decomposed charge density. The higher unoccupied states were hybridized with unoccupied oxygen 2p-states and located at the middle of band-gap.

키워드

Defect statesDensity functional theoryElectronic structureDensity functional theoryDoping (additives)Electronic structureTransition metal alloysMetallic behaviorPseudopotential planeTransition metals
제목
Electronic structure and defect states of transition metal doped rutile TiO2
저자
Kim, Yoon SukLee, Sung- HoLee, Kyung SubChung, Yong Chae
DOI
10.4028/www.scientific.net/SSP.124-126.787
발행일
2007-09
유형
Conference Paper
저널명
Solid State Phenomena
124-126
PART 1
페이지
787 ~ 790