버퍼 층을 이용한 RF 마그네트론 스퍼터 방법에 의한 Al:ZnO 박막의 성장

초록

The optimal condition of low temperature deposition of transparent conductive Al-doped zinc oxide (AZO) films is studied by RF magnetron sputtering method. To achieve enhanced- electrical property and good crystallites quality, we tried to deposit on glass using a two-step growth process. This process was to deposit AZO buffer layer with optimal growth condition on glass in-situ state. The AZO film grown at rf 120 W on buffer layer prepared at RF 50-60 W shows the electrical resistivity 3.9×10-4 Ωcm, Carrier concentration 1.22×1021/cm3, and mobility 9.9 cm2/Vs In these results, The crystallinity of AZO film on buffer layer was similar to that of AZO film on glass with no buffer later but the electrical properties of the AZO film were 30% improved than that of the AZO film with no buffer layer. Therefore, the cause of enhanced electrical properties was explained to be dependent on degree of crystallization and on buffer layer’s compressive stress by variation of Ar+ ion impinging energy.

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