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Electrical memory features of ferromagnetic CoFeAlSi nano-particles embedded in metal-oxide-semiconductor matrix
- Lee, JaBin;
- Kim, KiWoong;
- Lee, JunSeok;
- An, GwangGuk;
- Hong, JinPyo
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0초록
Half-metallic Heusler material Co(2)FeAl(0.5)Si(0.5) (CFAS) nano-particles (NPs) embedded in metal-oxide-semiconductor (MOS) structures with thin HfO(2) tunneling and MgO control oxides were investigated. The CFAS NPs were prepared by rapid thermal annealing. The formation of well-controlled CFAS NPs on thin HfO(2) tunneling oxide was confirmed by atomic force microscopy (AFM). Memory characteristics of CFAS NPs in MOS devices exhibited a large memory window of 4.65 V. as well as good retention and endurance times of 10(5) cycles and 10(9) s, respectively, demonstrating the potential of CFAS NPs as promising candidates for use in charge storage.
키워드
Sputtering; Heusler material; Co2FeAl0.5Si0.5; Nanoparticles; Metal-oxide-semiconductor; Capacitance-voltage; Atomic force microscopy; Carbon dioxide; Dielectric devices; Hafnium oxides; Iron compounds; Metallic compounds; MOS devices; Nanoparticles; Rapid thermal annealing; Semiconductor devices; Vanadium
- 제목
- Electrical memory features of ferromagnetic CoFeAlSi nano-particles embedded in metal-oxide-semiconductor matrix
- 저자
- Lee, JaBin; Kim, KiWoong; Lee, JunSeok; An, GwangGuk; Hong, JinPyo
- 발행일
- 2011-07
- 유형
- Article
- 저널명
- Thin Solid Films
- 권
- 519
- 호
- 18
- 페이지
- 6160 ~ 6163