상세 보기
Effects of amorphous InGaZnO thin film transistors with various buffer layers on polyimide substrate under negative bias-temperature stresses
- Ok, Kyung-Chul;
- Park, Sang-Hee Ko;
- Hwang, Chi-Sun;
- Shin, Hyun Soo;
- Kim, Daehwan;
- ... Park, Jin-Seong;
- 외 2명
Citations
SCOPUS
1초록
Buffer layers on flexible substrates have strongly affected to electrical performance and instability in oxide TFTs. The oxide TFT on proper buffer layer/PI substrate showed better electrical performance than that on other buffer layers because the buffer layer with high gas diffusion barrier properties can suppress to generate defect states in semiconductor and/or interface from hydrogen and water penetration. The origins of flexible oxide TFT instabilities were systematically investigated by using in-situ/ex-situ measurement and chemical/physical analysis.
키워드
Buffer layers; Device Instability; Flexible device; Oxide semiconductor thin film transistor; Buffer layers; Interface states; Interfaces (materials); Substrates; Thin film transistors; Bias-temperature stress; Device instabilities; Electrical performance; Flexible device; Flexible substrate; Oxide semiconductor thin film transistors; Polyimide substrate; Water penetration; Optical waveguides
- 제목
- Effects of amorphous InGaZnO thin film transistors with various buffer layers on polyimide substrate under negative bias-temperature stresses
- 저자
- Ok, Kyung-Chul; Park, Sang-Hee Ko; Hwang, Chi-Sun; Shin, Hyun Soo; Kim, Daehwan; Bae, Jonguk; Chin, Byung Doo; Park, Jin-Seong
- 발행일
- 2013-06
- 유형
- Article
- 권
- 44
- 호
- 1
- 페이지
- 1229 ~ 1231