Multilevel charging and discharging mechanisms of vertically stacked Ni1-xFex self-assembled nanoparticle arrays embedded in polyimide layers

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초록

Capacitance-voltage curves for the Al/polyimide (PI)/multilayered Ni1-xFex nanoparticle array/PI/p-Si (100) devices at 300 K showed that the flatband voltage shift of the metal-insulator-semiconductor capacitor was affected by the value of sweep voltage, indicative of the variations in the charged electron number in the multiple-stacked Ni1-xFex nanoparticle arrays in the floating gate. Current-voltage results showed that the electron charging and discharging in the Ni1-xFex nanoparticles were attributed to thermionic emission and Fowler-Nordheim tunneling, respectively. The multilevel charging and discharging mechanisms of vertically stacked Ni1-xFex self-assembled nanoparticle arrays embedded in PI layers are described on the basis of the experimental results.

키워드

QUANTUM-DOT; MEMORY; GATE
제목
Multilevel charging and discharging mechanisms of vertically stacked Ni1-xFex self-assembled nanoparticle arrays embedded in polyimide layers
저자
Kim, Tae Whan; Jung, J. H.; Yoon, Chong Seung; Kim, Young Ho
DOI
10.1063/1.2838300
발행일
2008-01
유형
Article
저널명
Applied Physics Letters
권
92
호
4
페이지
1 ~ 3