Perpendicular Magnetization of Ta/Ru/Ta/Co/Fe/MgO Multilayer

Kil, Joon Pyo; Choi, Yeonhoi; Bae, Gi Yoon; Oh, Hyungsik; Choi, Won Joon; Park, Wanjun

doi:10.1109/TMAG.2015.2438324

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Perpendicular Magnetization of Ta/Ru/Ta/Co/Fe/MgO Multilayer

Kil, Joon Pyo;
Choi, Yeonhoi;
Bae, Gi Yoon;
Oh, Hyungsik;
Choi, Won Joon;
... Park, Wanjun

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초록

Ta/Ru/Ta/Co/Fe/MgO film is studied to investigate the separate roles of Co and Fe in perpendicular magnetic anisotropy. Perpendicular magnetization is successfully obtained in this structure after a field annealing process (275 degrees C, 3 T, 30 min). Surface magnetic anisotropy at the Fe/MgO interface induces perpendicular magnetization for the Co/Fe bilayer with the critical contribution of the inserted Co. Magnetization properties resulting from the use of various Co and Fe layer thicknesses in the range of 0.36-0.6 nm (Co) and 0.52-0.91 nm (Fe) are analyzed, indicating the formation of a magnetic dead layer between the Co layer and the Ta seed layer. The maximum effective anisotropy energy (K-eff) is estimated as 1.63x10(5) J/m(3) for Co (0.36 nm)/Fe (0.65 nm).

키워드

Fe/MgO; interfacial anisotropy; magnetic tunnel junction (MTJ); perpendicular magnetic anisotropy (PMA); ANISOTROPY; FILMS

제목: Perpendicular Magnetization of Ta/Ru/Ta/Co/Fe/MgO Multilayer

저자: Kil, Joon Pyo; Choi, Yeonhoi; Bae, Gi Yoon; Oh, Hyungsik; Choi, Won Joon; Park, Wanjun

DOI: 10.1109/TMAG.2015.2438324

발행일: 2015-11

유형: Article; Proceedings Paper

저널명: IEEE Transactions on Magnetics

권: 51

호: 11

페이지: 1 ~ 4