Anode dependence of set voltage in resistive switching of metal/HfO2/metal resistors

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초록

The anode dependence of set voltage in resistive switching behaviors of metal/HfO2/metal resistors is investigated by applying positive and negative voltage polarity, and by changing the location of the electrodes made of various metals including Al, Pt, Mo, and Ru. When the same anode is applied to resistors whatever cathodes are, their set voltages in high resistance state are very similar. The strong anode dependence on set voltage is related to the potential near the anode domain owing to the partial rupture of the conducting filament. This rupture of filaments makes the thick insulator film thinner with a small potential barrier.

키워드

METAL-OXIDESELECTRODEMEMORYDEPOSITIONDEVICESFILMS
제목
Anode dependence of set voltage in resistive switching of metal/HfO2/metal resistors
저자
Park, In-SungJung, Yong ChanAhn, Jinho
DOI
10.1063/1.4903805
발행일
2014-12
유형
Article
저널명
Applied Physics Letters
105
22
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1 ~ 4