High-gain low-noise Ku-band mixer with inverting transconductance technique

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초록

In this study, the authors present a high-gain, low-noise Ku-band down conversion mixer in 0.18 mu m complimentary metal oxide semiconductor technology. An inverting transconductance technique is adopted to obtain a high conversion gain, which uses both inverting and current bleeding effects. The noise performance is improved by using a switched biasing technique. Current bleeding and inductor bridging techniques allow the simultaneous achievement of low noise and high conversion gain. The proposed mixer offers a measured conversion gain from 10.1 to 13.6 dB and a noise figure from 8.6 to 11.2 dB over 11 to 20 GHz and a third order input intercept point of -5 dBm at 16 GHz while consuming 8.3 mW from a 1.8 V supply voltage. The chip size, including test pads, is 0.77 x 0.75 mm(2).

키워드

Mixers(machinery)MOS devicesSemiconductor device manufacture
제목
High-gain low-noise Ku-band mixer with inverting transconductance technique
저자
Lee, Ji-YoungKang, Yun-MoLee, Sang-KonYun, Tae-Yeoul
DOI
10.1049/iet-map.2012.0482
발행일
2013-01
유형
Article
저널명
IET Microwaves, Antennas and Propagation
7
2
페이지
141 ~ 145