Nonvolatile memory devices based on Au/graphene oxide nanocomposites with bilateral multilevel characteristics

초록

Current-voltage measurements on the Al/self-assembled Au nanoparticles inserted in graphene-oxide (GO) layer/indium-tin-oxide/glass devices at 300 K showed bilateral current bistabilities with four current states in a cell. The multilevel behaviors with four current states were obtained by applying different erasing voltages of -6, -12, and -18 V with a writing voltage of 3 V or different erasing voltages of 8, 14, and 18 V with a writing voltage of -5 V. The resistive memory devices demonstrated bilateral multilevel characteristics due to a nanocomposite consisting of Au nanoparticles inserted in a GO layer. The stabilities of the four current states with 1x 10(-1), 1 x 10(-4), 1 x 10(-6), and 1 x 10(-8) A achieved for the devices by using different erasing voltages were maintained for retention cycles larger than 1 x 10(4) s under a continuous reading test. Memory operating mechanisms and multilevel characteristics based on the I-V curves were described by using the carrier-capture in the self-assembled Au nanoparticles and the local filament-path on the surface between the electrode and the GO layer.

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