Four-level Nonvolatile Small-molecule Memory-cell Embedded with Fe Nanocrystals Surrounded with an FeO and Fe2O3 Tunneling Barrier

초록

We developed a nonvolatile cross-bar 4F(2) small molecule (Alq(3): aluminum tris (8-hydroxyquinoline)) memory cell embedded with Fe nanocrystals surrounded by an FeO and Fe2O3 tunneling barrier. The memory, cell demonstrates a memory margin (I-on/I-off ratio) of similar to 7.44 x 10(2) and a retention-time of similar to 10(5) sec for four current levels (I-off: 2.73 x 10(-8), I-int2: 5.87 x 10(-7), I-int1: 3.64 x 10(-6), and I-on: 2.03 x 10(-5) A), which can probably be extended to ten years. Memory cells of this type follow a current conduction mechanism with space-charge-limited-current and F-N tunneling for nonvolatile memory cell operation.

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