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LOW VOLTAGE-LOW POWER FULL-BAND UWB RECEIVER FRONT-END
- Lee, Ji-Young;
- Yun, Tae-Yeoul
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0초록
This article proposes a low-voltage, low-power, low-noise, wideband receiver front-end consisting of a low-noise amplifier (LNA) and a mixer. The LNA stage uses a current-reuse technique for low-power consumption and high gain. A switched biasing technique is then used to reduce the flicker noise of the mixer. A bulk injection structure is adopted for low-voltage operation of the mixer. The proposed receiver front-end achieves input impedance matching of less than -10 dB from 3.1 to 10.6 GHz, a minimum noise figure of 4.9 dB, and a maximum power gain of 17.7 dB while consuming 8.25 mW from 6.87 mA and 1.2 V. This receiver front-end is fabricated using a 0.18-mu m CMOS process.
키워드
bulk injection; current reuse; front-end; switched biasing; ultra-wideband; CMOS integrated circuits; Mixers (machinery); Ultra-wideband(UWB)
- 제목
- LOW VOLTAGE-LOW POWER FULL-BAND UWB RECEIVER FRONT-END
- 저자
- Lee, Ji-Young; Yun, Tae-Yeoul
- 발행일
- 2013-02
- 유형
- Article
- 권
- 55
- 호
- 2
- 페이지
- 278 ~ 281