LOW VOLTAGE-LOW POWER FULL-BAND UWB RECEIVER FRONT-END

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초록

This article proposes a low-voltage, low-power, low-noise, wideband receiver front-end consisting of a low-noise amplifier (LNA) and a mixer. The LNA stage uses a current-reuse technique for low-power consumption and high gain. A switched biasing technique is then used to reduce the flicker noise of the mixer. A bulk injection structure is adopted for low-voltage operation of the mixer. The proposed receiver front-end achieves input impedance matching of less than -10 dB from 3.1 to 10.6 GHz, a minimum noise figure of 4.9 dB, and a maximum power gain of 17.7 dB while consuming 8.25 mW from 6.87 mA and 1.2 V. This receiver front-end is fabricated using a 0.18-mu m CMOS process.

키워드

bulk injectioncurrent reusefront-endswitched biasingultra-widebandCMOS integrated circuitsMixers (machinery)Ultra-wideband(UWB)
제목
LOW VOLTAGE-LOW POWER FULL-BAND UWB RECEIVER FRONT-END
저자
Lee, Ji-YoungYun, Tae-Yeoul
DOI
10.1002/mop.27299
발행일
2013-02
유형
Article
저널명
Microwave and Optical Technology Letters
55
2
페이지
278 ~ 281