ScholarWorks@한양대학교

상세 보기

THEORETICAL CALCULATION ON THE EFFECT OF A NANO-THICKNESS OF STRAINED Si GROWN ON SiGe-ON-INSULATOR ON THE ELECTRON MOBILITY BEHAVIOR

  • 박재근
제목
THEORETICAL CALCULATION ON THE EFFECT OF A NANO-THICKNESS OF STRAINED Si GROWN ON SiGe-ON-INSULATOR ON THE ELECTRON MOBILITY BEHAVIOR
저자
박재근
발행일
2003-04-26
학회명
춘계 한국물리학회
개최지
연세대학교

ScholarWorks@한양대학교

(04763) 서울특별시 성동구 왕십리로 222 Tel. +82-2-2220-1370 +82-2-2220-1366

COPYRIGHT © 한양대학교 All Rights Reserved.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.

You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.