The Fabrication of Er-Doped Silica Film for Optical Amplifier

초록

PLC(Planar Lightwave Circuit) type optical amplifier is an integrated optic device applicable to access network in optical communication. Because of its compact physical size, easy mass-production, and integratibility into monolithic multi-functional optical devices, this device is expected to be a key element in the next generation optical communication network. In this research, the fabrication of Si/SiO2 optical waveguide amplifier by FHD(Flame Hydrolysis Deposition) and solution doping are mainly discussed. Underclad and core layer SiO2 films were deposited by FHD and subsequently solution doping was carried out to add Er3+ into deposited core layer film. The influences of pre-sintering and solution doping process to the consolidation condition of film were investigated to optimize the sintering process. The amount of doped Er3+ was measured by ICP-MASS and EDS. In addition, as a basic characteristic of amplifier, the fluorescence spectrum of Er3+-doped silica film was measured to check if the film was correctly doped with Er3+.