Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers

Lin, Jian; Ooi, Poh Choon; Li, Fushan; Guo, Tailiang; KIM, TAE WHAN

doi:10.1109/LED.2015.2480119

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Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers

Lin, Jian;
Ooi, Poh Choon;
Li, Fushan;
Guo, Tailiang;
KIM, TAE WHAN

Citations

WEB OF SCIENCE

12

Citations

SCOPUS

14

초록

Non-volatile memory (NVM) devices using graphene quantum dots (GQDs) as charge trapping sites were fabricated with silver nanowires as top electrodes using solution process. The stacking structure consists of GQDs embedded between polymethylsilsesquioxane layers constructed on transparent flexible substrate. Hysteresis window was observed in the current-voltage plots, and the NVM devices are reprogrammable and stable up to 1 x 10(4) s with a distinct ON/OFF ratio of 10(4). In addition, the memory device shows the stable hysteresis window without obvious degradation upon bending under different curvature radii.

키워드

Graphene quantum dots; silver nanowires; flexible; non-volatile memory; INJECTION; DEVICES; DESIGN

제목: Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers

저자: Lin, Jian; Ooi, Poh Choon; Li, Fushan; Guo, Tailiang; KIM, TAE WHAN

DOI: 10.1109/LED.2015.2480119

발행일: 2015-11

유형: Article

저널명: IEEE Electron Device Letters

권: 36

호: 11

페이지: 1212 ~ 1214