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초록
Current-voltage (I-V) curves for the Al/poly(methylmethacrylate) (PMMA)/AuCl3 nanoparticles embedded in PMMA layer/PMMA/indium-tin-oxide (ITO) devices at 300 K showed that the memory margins of the I-V curves were significantly affected by changing AuCl3 concentration. An ON/OFF ratio of 10(3) for the device with an AuCl3 nanoparticle concentration of 0.5 wt% was observed. The retention of the organic bistable devices (OBDs) was maintained for retention times larger than 1 x 10(4) s, indicative of the stability of the device. The memory mechanisms of the fabricated OBDs were described by using charge trapping and tunneling processes shown in the energy diagram and the I-V curves.
키워드
AuCl3 Nanoparticles; PMMA; Concentration; Charge Trapping; Tunneling; RESISTIVE MEMORY; ORGANIC/INORGANIC NANOCOMPOSITES; MECHANISMS
- 제목
- Effect of the Concentration of the AuCl3 Nanoparticles Embedded in a Poly(Methylmethacrylate) Layer on the Electrical Characteristics in Organic Bistable Devices
- 저자
- Lee, Nam Hyun; Kim, Tae Whan
- 발행일
- 2017-06
- 유형
- Article
- 권
- 17
- 호
- 6
- 페이지
- 4176 ~ 4179