Post-RTA effect on electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET

Park, Jea-Gun; Shim, Tae-Hun; Lee, Gon-Sub; Cho, Won-Ju; Ahn, Chang-Geun

doi:10.1109/SOI.2006.284426

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Post-RTA effect on electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET

Park, Jea-Gun;
Shim, Tae-Hun;
Lee, Gon-Sub;
Cho, Won-Ju;
Ahn, Chang-Geun

Citations

SCOPUS

2

초록

The effect of rapid thermal annealing (RTA) and post-RTA annealing (PRA) on the electrical chracteristics of both strained Si and conventional SOI n-MOSFETs was investigated. We demonstrated that post-RTA heat treatment rather than typical RTA is inevitable to obtain enhanced DC characteristics in strained Si n-MOSFET. This is attributted to the supression of channel surface roughness owing to post-RTA.

키워드

Rapid thermal annealing; Semiconductor growth; Silicon alloys; Silicon on insulator technology; Surface roughness; Channel surface roughness; MOSFET devices

제목: Post-RTA effect on electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET

저자: Park, Jea-Gun; Shim, Tae-Hun; Lee, Gon-Sub; Cho, Won-Ju; Ahn, Chang-Geun

DOI: 10.1109/SOI.2006.284426

발행일: 2006-10

유형: Conference Paper

저널명: IEEE International SOI Conference

페이지: 47 ~ 48