Driving Force of Phase Transition in Indium Nanowires on Si(111)

  • Kim, Hyun-Jung
  • Cho, Jun-Hyung
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초록

The precise driving force of the phase transition in indium nanowires on Si(111) has been controversial whether it is driven by a Peierls instability or by a simple energy lowering due to a periodic lattice distortion. The present van der Waals (vdW) corrected hybrid density functional calculation predicts that the low-temperature 8 x 2 structure whose building blocks are indium hexagons is energetically favored over the room-temperature 4 x 1 structure. We show that the correction of self-interaction error and the inclusion of vdW interactions play crucial roles in describing the covalent bonding, band-gap opening, and energetics of hexagon structures. The results manifest that the formation of hexagons occurs by a simple energy lowering due to the lattice distortion, not by a charge density wave formation arising from Fermi surface nesting.

키워드

METAL-INSULATOR-TRANSITIONQUANTUM CHAINSELECTRONSURFACEINSTABILITYMOLECULESSILICON
제목
Driving Force of Phase Transition in Indium Nanowires on Si(111)
저자
Kim, Hyun-JungCho, Jun-Hyung
DOI
10.1103/PhysRevLett.110.116801
발행일
2013-03
유형
Article
저널명
Physical Review Letters
110
11
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1 ~ 5

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