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Dependence of Forming-free GeSe based Conductive-Bridging Random-Access-Memory Characteristics on Thicknesses and Chemical Composition Ratio of GeSex
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Dependence of Forming-free GeSe based Conductive-Bridging Random-Access-Memory Characteristics on Thicknesses and Chemical Composition Ratio of GeSex
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박재근
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2020-11-05
학회명
2020 KPS fall meeting
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