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Roles of interfacial TiOxN1-x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks
- Kwak, June Sik;
- Do, Young Ho;
- Bae, Yoon Cheol;
- Im, Hyun Sik;
- Yoo, Jong Hee;
- ... Hong, Jin Pyo;
- 외 2명
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56초록
Reversible counter-clockwise and clockwise resistive switching in a TiN/TiO2/TiN structure was studied by different polarities of bias voltage. The nature of the bipolar switching phenomenon is related to the creation and annihilation of filament paths caused by redox reactions at locally confined interfaces between the TiO2 layer and TiN electrode. The analysis of electron energy loss spectroscopy (EELS) confirmed the formation of interfacial TiOxN1-x layer between the TiO2 and TiN bottom electrode. The TiOxN1- x layer reduces current levels of ON and OFF states by partially blocking oxygen ion drift to the TiN bottom electrode.
키워드
Energy dissipation; Oxygen; Redox reactions; Switching systems; Titanium nitride; Bottom electrodes; Counter-clockwise; Creation and annihilation; Current levels; Ion drifts; Resistive switching; Switching phenomenon; TiN electrodes; TiO; Electron energy loss spectroscopy
- 제목
- Roles of interfacial TiOxN1-x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks
- 저자
- Kwak, June Sik; Do, Young Ho; Bae, Yoon Cheol; Im, Hyun Sik; Yoo, Jong Hee; Sung, Min Gyu; Hwang, Yun Taek; Hong, Jin Pyo
- 발행일
- 2010-05
- 유형
- Article
- 권
- 96
- 호
- 22
- 페이지
- 1 ~ 3