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Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition
- Toan, Nguyen Van;
- Zhao, Dong;
- Inomata, Naoki;
- Toda, Masaya;
- Song, Yun Heub;
- 외 1명
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0초록
NAND and NOR logical gates based on the electrostatically driven silicon nanoelectromechanical (NEM) switches coated tungsten (W) are designed, fabricated and evaluated. A selectively conformal W deposition on high aspect ratio silicon structures is investigated. Logical gates are successfully fabricated and all their functions have been proved. This work opens the possibility not only for producing the complex mechanical logic systems but also for a way to reducing capacitive gap width.
키워드
Logical gates; NAND; nanoelectromechanical switches; NOR; selective chemical vapor deposition; SWITCHES; Actuators; Aspect ratio; Chemical vapor deposition; Microsystems; NAND circuits; Electrostatically driven; High aspect ratio; Logical gates; Mechanical logic; NAND; Nano-electromechanical; Nanoelectromechanical switches; Silicon structures; Solid-state sensors
- 제목
- Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition
- 저자
- Toan, Nguyen Van; Zhao, Dong; Inomata, Naoki; Toda, Masaya; Song, Yun Heub; Ono, Takahito
- 발행일
- 2019-06
- 유형
- Conference Paper
- 저널명
- International Solid-State Sensors, Actuators and Microsystems Conference
- 페이지
- 1709 ~ 1711
- 언어
- ENG
- 출판사
- IEEE
- 발행국가
- 영국
- 분량
- 3 페이지
- ISSN
- E 2167-0021
P 2167-0013