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초록
Pt nanocrystals using HfO2 as tunneling and control layers were investigated for nonvolatile memory application. A Pt layer was deposited by electron-beam evaporation and transformed into well-separated nanocrystals by rapid thermal annealing at 700 degrees C. The fabricated Pt nanocrystals had a density of 2.1x10(12) cm(-2) and an average size of 3.7 nm. The capacitance-voltage measurements demonstrate that the nonvolatile memory with Pt nanocrystals had a memory effect with similar to 0.9 V flatband voltage shift under a gate voltage of 5 V. The device showed a competitive retention characteristic with a charge loss rate of 20% after 10(4) s.
키워드
electron beam deposition; hafnium compounds; nanostructured materials; platinum; random-access storage; rapid thermal annealing; tunnelling; Data storage equipment; Electrodeposition; Hafnium compounds; Nanocrystalline alloys; Platinum; Rapid thermal annealing; Rapid thermal processing; Thermal evaporation; Nanocrystals; A densities; Atomic-layer-deposited; Average sizes; Capacitance-voltage measurements; Charge loss; Competitive retentions; Control layers; Electron-beam evaporations; Flat-band voltage shifts; Gate voltages; Memory effects; Non volatile memory devices; Non-volatile memories; Non-volatile memory applications; Remote plasmas; Thermal-annealing
- 제목
- Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
- 저자
- Kim, Honggyu; Woo, Sanghyun; Kim, Hyungchul; Bang, Seokhwan; Kim, Yongchan; Choi, Daesik; Jeon, Hyeongtag
- 발행일
- 2009-01
- 유형
- Article
- 권
- 12
- 호
- 4
- 페이지
- H92 ~ H94