ScholarWorks@한양대학교

상세 보기

Characteristics of HfO2 Gate dielectric deposited by remote plasma enhanced atomic layer deposition method

  • 전형탁
제목
Characteristics of HfO2 Gate dielectric deposited by remote plasma enhanced atomic layer deposition method
저자
전형탁
발행일
2003-04-22
학회명
2003 MRS Spring Meeting
개최지
San Francisco Marriott & Argnet Hotel

ScholarWorks@한양대학교

(04763) 서울특별시 성동구 왕십리로 222 Tel. +82-2-2220-1370 +82-2-2220-1366

COPYRIGHT © 한양대학교 All Rights Reserved.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.

You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.