Tunneling magnetoresistance from non-collinear alignment of magnetization in Fe/GaAlAs/GaMnAs magnetic tunnel junctions

초록

Tunneling magnetoresistance (TMR) observed in Fe/GaAlAs/GaMnAs magnetic tunnel junctions depends strongly on relative configuration of magnetizations in the GaMnAs and Fe layers. Using a series of field orientations, we show that non-collinear alignments of magnetization in this structure occur when the magnetic field is applied away from the easy axes of the magnetic layers; and we find that the values of TMR observed for non-collinear spin configurations are very different from those of collinear configurations. The observed behavior suggests the possibility of using this effect for multivalued magnetic memory devices.

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