상세 보기
Interface-Dependent Spin-Reorientation Energy Barrier in Fe/MgO(001) Thin Film
- Choi, Heechae;
- Lee, Eung-Kwan;
- Cho, Sung Beom;
- Yoo, Dong Su;
- Chung, Yong-Chae
Citations
WEB OF SCIENCE
7Citations
SCOPUS
7초록
Using the density-functional-theory-based atomic modeling, the stable interface structure and the resultant magnetocrystalline anisotropy (MCA) of the Fe/MgO(001) for magnetic random access memory have been studied. The most stable surface structure of Fe/MgO(001) thin-film system was found to be either defect free or possessing oxygen vacancies in a c(2 x 1) periodicity. The formation of the oxygen vacancies in c(2 x 1) periodicity on MgO(001) surface reduced the MCA of Fe layer from 1.38 to 0.31 meV/atom. The reduced MCA is originated from the filling of the minority states of the Fe orbital below Fermi level.
키워드
Density functional theory; Fe/MgO(001); interface structure; perpendicular magnetic anisotropy; ROOM-TEMPERATURE; MAGNETORESISTANCE
- 제목
- Interface-Dependent Spin-Reorientation Energy Barrier in Fe/MgO(001) Thin Film
- 저자
- Choi, Heechae; Lee, Eung-Kwan; Cho, Sung Beom; Yoo, Dong Su; Chung, Yong-Chae
- 발행일
- 2011-09
- 유형
- Article
- 권
- 32
- 호
- 9
- 페이지
- 1287 ~ 1289