상세 보기
Increasing channel area of 3D stackable vertical gate flash memory by inter-bit line dielectric reduction
- 제목
- Increasing channel area of 3D stackable vertical gate flash memory by inter-bit line dielectric reduction
- 저자
- 이승백
- 발행일
- 2011-06-20
- 학회명
- International Technical Conference on Circuit/Systems, Computers and Communications 2011
- 개최지
- Hyundai Hotel Gyeongju