ScholarWorks@한양대학교

상세 보기

Retention Characteristics Dependent on the Trap Distribution of the Silicon Nitride Layer in TANOS Flash Memory Devices

  • 김태환
제목
Retention Characteristics Dependent on the Trap Distribution of the Silicon Nitride Layer in TANOS Flash Memory Devices
저자
김태환
발행일
2011-02-17
학회명
2011년(18회) 한국반도체 학술대회
개최지
해비치 호텔& 리조트 제주 ,Korea

ScholarWorks@한양대학교

(04763) 서울특별시 성동구 왕십리로 222 Tel. +82-2-2220-1370 +82-2-2220-1366

COPYRIGHT © 한양대학교 All Rights Reserved.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.

You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.