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Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy
- Lee, D. J.;
- Park, C. S.;
- Lee, Cheol Jin;
- Song, J. D.;
- Koo, H. C.;
- ... Yoon, Chong S.;
- 외 4명
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2초록
The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase Tc (>300 K) by preventing MnO2. After milling 1-3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO2 is considered to originate from the increased p-d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process. (C) 2014 Elsevier B.V. All rights
키워드
p-type InP:Be/Mn/InP:Be triple layers; Increased T-c; MBE; NEUTRAL MANGANESE ACCEPTOR; INP; SEMICONDUCTORS
- 제목
- Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy
- 저자
- Lee, D. J.; Park, C. S.; Lee, Cheol Jin; Song, J. D.; Koo, H. C.; Yoon, Chong S.; Yoon, Im Taek; Kim, H. S.; Kang, T. W.; Shon, Yoon
- 발행일
- 2014-04
- 유형
- Article
- 권
- 14
- 호
- 4
- 페이지
- 558 ~ 562
- 언어
- ENG
- 출판사
- ELSEVIER SCIENCE BV
- 발행국가
- 네덜란드
- 분량
- 5 페이지
- ISSN
- E 1878-1675
P 1567-1739