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High temperature annealing behavior of igzo using plasma enhanced atomic layer deposition
- Kim, Yoon-Seo;
- Jeong, Hyun-Jun;
- Jeong, Seok-Goo;
- Park, Jin-Seong
Citations
SCOPUS
0초록
In this study, highly oriented crystalline indium-gallium-zinc oxide (IGZO) thin films and its thin film transistors (TFTs) were fabricated using plasma enhanced atomic layer deposition (PEALD). The high temperature (400-700oC) annealing behavior of IGZO manufactured using PEALD was confirmed. As the temperature increases, the crystallization becomes highly oriented in the c-axis direction. However, due to the occurrence of dehydrogenation, the electrical performances and reliability of the device are gradually degraded. If the process of highly ordered IGZO thin film with moderate hydrogen content is secured, it is possible to manufacture oxide TFTs with excellent electrical performances.
키워드
Highly-oriented crystalline; Hydrogen dissociation; Indium gallium zinc oxide (IGZO); Plasma enhanced atomic layer deposition (PEALD); Atomic layer deposition; Atoms; Hydrogen; II-VI semiconductors; Oxide films; Semiconducting indium compounds; Thin film circuits; Thin film transistors; Thin films; Zinc oxide; Gallium compounds; Annealing behavior; Electrical performance; Gallium zinc oxides; High-temperature annealing; Highly-oriented crystalline; Hydrogen dissociation; Indium gallium zinc oxide; Plasma enhanced atomic layer deposition; Plasma-enhanced atomic layer deposition; Zinc oxide thin films
- 제목
- High temperature annealing behavior of igzo using plasma enhanced atomic layer deposition
- 저자
- Kim, Yoon-Seo; Jeong, Hyun-Jun; Jeong, Seok-Goo; Park, Jin-Seong
- 발행일
- 2022-06
- 유형
- Conference Paper
- 권
- 53
- 호
- 1
- 페이지
- 1047 ~ 1050
- 언어
- ENG
- 분량
- 4 페이지
- ISSN
- E 2168-0159
P 0097-966X