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초록
We demonstrate a significant improvement in various electrical instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) by implanting Au nanoparticles (NPs) on the a-IGZO back-channel. This TFT showed the enhanced stability of threshold voltage (V-th) under ambient humidity, illumination stress, and a-IGZO thickness variation tests. Application of back-channel Au NPs to a-IGZO TFT is regarded to control the surface potential, to lead reversible carrier trap/injection, and to increase incident UV light absorption by local surface plasmon. Au NPs are formed by e-beam evaporation, and therefore, this technique can be applicable to the TFT manufacturing process.
키워드
Amorphous semiconductors; Gold alloys; Nanoparticles; Thin film transistors; Gold; Amorphous-indium gallium zinc oxides; E beam evaporation; Electrical instability; Electrical stability; Enhanced stability; Local surface plasmons; Manufacturing process; Thickness variation
- 제목
- Electrical stability enhancement of the amorphous In-Ga-Zn-O thin film transistor by formation of Au nanoparticles on the back-channel surface
- 저자
- Cho, Byungsu; Lee, Jaesang; Seo, Hyungtak; Jeon, Hyeongtag
- 발행일
- 2013-03
- 유형
- Article
- 권
- 102
- 호
- 10
- 페이지
- 1 ~ 5