Enhancement of the electrical characteristics for vertical NAND flash memory devices using a modified array structure

초록

The electrical characteristics of vertical NAND flash memory devices with a modified structure were investigated by using a technology computer-aided design simulation tool in order to reduce the cell-to-cell interference. The threshold voltage shift of memory devices with a modified cell with a protruding distance of 3 nm was reduced by 88% compared to that of conventional cell. When the programming operation of the target cell with a modified array structure is performed, the cell-to-cell interference decreases due to the programmed charges of adjacent cells.

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